Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology

Abstract

In this paper, two LNAs, designed to operate in Ka and V bands, and realized in a 70 nm GaAs/InGaAs technology, are presented. Both amplifiers have a 2-stage structure featured by source feedback and self-biasing networks to improve noise performance and to simplify the external circuitry, respectively. Total area occupation of the realized MMICs is 3x1.2 mm2 and 3x1 mm2. The Ka-band amplifier exhibits a noise figure lower than 1.5 dB over 27–31.5 GHz and a gain between 16 dB and 18 dB. The V-band LNA has a 1.7 dB noise figure in the 4751 GHz band, with an associated gain between 14.5 dB and 15.5 dB.