Electrical Characteristics of Polycrystalline 3C-SiC Grown on A1N Buffer Layer

Abstract

This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO2 and AIN buffer layers by CVD. FT-IR was used to obtain the crystallinity and Si-C bonding structure of the poly 3C-SiC according to various growth temperatures and buffer layers. The surface chemical composition and the electron mobility of the poly 3C-SiC grown on each buffer layers were investigated by XPS and Hall effect.