Multi-Gate MOSFETs with Back-Gate Control

Abstract

In this paper, we develop a design guideline for multi-gate MOSFET for Vth control. The design window of channel height (tSi) and width (wSi) to obtain both sufficiently large gamma and suppressed SCE in hp45 node LSTP devices is shown by 3D device simulation. The channel width dependence of gamma is also experimentally examined