Modelling TrenchMOSFETs in SPICE

2008 15th IEEE International Conference on Electronics, Circuits and Systems Pub Date : 2008-11-17 DOI:10.1109/ICECS.2008.4674794

J. Zarebski, K. Górecki

引用次数: 5

Abstract

In the paper the isothermal model of TrenchMOSFETs offered by the producer of these devices and the electrothermal model of these devices proposed by the authors were presented. The results of the experimental verification of both the models are given as well.

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在SPICE建模沟mosfet

本文介绍了这些器件的生产商提供的沟槽mosfet的等温模型和作者提出的这些器件的电热模型。并给出了两种模型的实验验证结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2008 15th IEEE International Conference on Electronics, Circuits and Systems

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