A Neural Recording IC Design with on-chip CMOS Electrode Array for Brain-machine Interface

Ronghao Zhang, Xu Liu, Zhijie Chen, Peiyuan Wan, Tao Chen
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Abstract

This paper presents an integrated circuit design for neural recording chip with integrated CMOS electrode array. The implementation of on-chip electrode array can greatly improve the implantability of neural recording systems. The chip is mainly composed of a neural recording analog front end and an $8\times 8$ microelectrode array designed in CMOS process technology. The analog front end of the neural recording circuit adopts chopper technique, which effectively reduces the low-frequency noise. The whole circuit has been designed in Cadence using the SMIC 180-nm CMOS process. The simulation results show that the signal with a frequency ranging from 0-2kHz and the amplitude ranging from $0-500 \ \mu \mathrm{V}$ can be independently recorded through the electrodes with a control terminal. The electrode array and the recording analog front end IC are partly overlapped using different metal layers, saving the chip area. The chip area of the final circuit with 64 electrodes is only 1400 $\mu \mathrm{m}\times 760 \ \mu \mathrm{m}$.
基于片上CMOS电极阵列的脑机接口神经记录集成电路设计
本文提出了一种集成CMOS电极阵列的神经记录芯片的集成电路设计。片上电极阵列的实现可以大大提高神经记录系统的可移植性。该芯片主要由神经记录模拟前端和采用CMOS工艺设计的$8 × 8$微电极阵列组成。神经记录电路的模拟前端采用斩波技术,有效地降低了低频噪声。整个电路采用中芯国际180纳米CMOS工艺在Cadence进行了设计。仿真结果表明,通过带控制终端的电极可以独立记录频率为0 ~ 2khz、幅度为0 ~ 500 μ m{V}$的信号。电极阵列和记录模拟前端IC采用不同的金属层部分重叠,节省了芯片面积。64个电极的最终电路的芯片面积仅为1400 \ \mu \ mathm {m}乘以760 \ \mu \ mathm {m}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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