FinFETs on insulator with silicided source/drain

Abstract

In this paper, some new developments of SOI and FOI (fin-on-insulator) FinFETs with conventional silicide S/D and Schottky barrier S/D are summarized. It is observed that large junction leakages occur for bulk FinFETs with conventional silicide S/D. By forming Ni(Pt)Si (5% Pt) silicide with conventional silicide process, parasitic resistances of FOI FinFETs are dramatically reduced without increasing of leakage currents and then device performance are increased significantly. An additional 50% performance enhancement is achieved for the FOI FinFETs with Schottky barrier S/D. The good controls of short channel effects and channel leakage are also obtained for FinFETs on insulator. High-k metal gate is used for the FinFETs.