Impact of pulse rise time on programming of cross-point RRAM arrays

Abstract

The role of pulse rise time during RRAM programming of cross-point arrays is investigated. The parasitic components in memory arrays is shown to result in distortion and degradation of the applied pulse on the memory cells (compared to the ideal/as-generated pulse), and will potentially cause programming failure. For the first time, the impact of pulse rising edge on the switching voltage is measured. The degradation and distortion of the applied pulse will result in programming failure when the pulse width becomes narrow. Thus, extra attention must be paid for large scale cross-point architecture in high-speed applications.