4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation

Abstract

The dependence of a pin diode's forward voltage degradation on device structures and crystal faces has been investigated. This investigation clarified for the first time that forward voltage degradation is reduced by fabricating the diodes on the (000-1) C-face off-angled toward <11-20>. High voltage 4H-SiC pin diodes on the (000-1) C-face with reduced forward degradation have also been fabricated successfully. A pin diode's highest breakdown voltage of 4.6 kV is achieved, and /spl Delta/V/sub f/ reduces to 0.04 V.