Steep-Slope Negative Quantum Capacitance Field-Effect Transistor

Abstract

For the first time, we report the design and fabrication of a steep-slope negative quantum capacitance field-effect transistor (NQCFET) with a single-layer (SL)-graphene encapsulated in the gate stack of a MoS2 FET. Subthermionic steep switching is achieved with a minimum subthreshold slope (SS) of 31 mV/dec with negligible hysteresis. The contribution of negative quantum capacitance from the low density of states in the electron system in SL-graphene has been experimentally and theoretically explored.