Power integrity behavior for various packaging environments

Masahiro Terasaki, Sho Kiyosige, W. Ichimura, R. Kobayashi, G. Kubo, H. Otsuka, T. Sudo
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引用次数: 2

Abstract

Power integrity design has become a critical issue in digital electronic systems, as advanced CMOS LSIs operate at higher clock frequency and at lower supply voltage. Power supply fluctuation excited by core circuits or I/O buffer circuits induces logic instability and electromagnetic radiation. Therefore, total impedance of power distribution network (PDN) must be taking into consideration in the chip-package-board co-design. Especially, anti-resonance peaks in the PDN created by the parallel combination of on-chip capacitance and package inductance induce the unwanted power supply fluctuation, and results in the degradation of signal integrity and electromagnetic interference (EMI). In this paper, effects of critical damping condition for the total PDN impedance on power supply noise has been studied by adding different RC circuit to the intrinsic on-die RC circuit of chip. Three test chips were assumed to be designed on-chip PDN properties. The measurement and analysis of power supply noises for the three test chips showed typical characteristics of oscillatory region and damped regions the critical damping condition against the anti-resonance peak has been proved to be effective to suppress the power supply noise on the chip. Furthermore QFP and BGA are used for a package and the effect of anti-resonance and power supply noise control by the total impedance of a chip package board are verified from the difference in inductance.
各种封装环境的电源完整性行为
随着先进的CMOS lsi工作在更高的时钟频率和更低的电源电压下,电源完整性设计已经成为数字电子系统中的一个关键问题。由核心电路或I/O缓冲电路激发的电源波动会引起逻辑不稳定和电磁辐射。因此,在芯片-封装-板协同设计中必须考虑配电网络的总阻抗。特别是,片上电容和封装电感并联产生的PDN抗谐振峰会引起不必要的电源波动,导致信号完整性下降和电磁干扰(EMI)。本文通过在芯片的片内RC电路中加入不同的RC电路,研究了PDN总阻抗的临界阻尼条件对电源噪声的影响。假定三个测试芯片具有片上PDN特性。通过对三种测试芯片的电源噪声测量分析,显示出典型的振荡区和阻尼区特征,证明了针对抗共振峰的临界阻尼条件对抑制芯片上的电源噪声是有效的。此外,将QFP和BGA用于封装,并从电感差的角度验证了芯片封装板总阻抗对抗谐振和电源噪声控制的效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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