Sputtered Ge-Si heteroepitaxial thin films for photodetection in third window

2008 5th IEEE International Conference on Group IV Photonics Pub Date : 2008-10-07 DOI:10.1109/GROUP4.2008.4638169

M. Fere, M. Lanata, D. Piccinin, S. Pietralunga, A. Zappettini, P. Ossi, M. Martinelli

引用次数: 0

Abstract

DC-pulsed magnetron sputtering (PMS) allows to produce heteroepitaxial p-type Germanium thin films on 6rdquo Silicon wafers. Integrated p-n photodiodes, based on DC-PMS deposited Ge/Si heterojunctions, feature flat responsivity over the whole third communication window.

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用于第三窗口光探测的溅射锗硅异质外延薄膜

直流脉冲磁控溅射(PMS)可以在6rdquo硅片上制备异质外延p型锗薄膜。基于DC-PMS沉积Ge/Si异质结的集成p-n光电二极管在整个第三通信窗口具有平坦的响应性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 5th IEEE International Conference on Group IV Photonics

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