A. Irace, G. Breglio, P. Spirito, A. Bricconi, D. Raffo, L. Merlin
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引用次数: 6
Abstract
The aim of this paper is to give an insight and a possible explanation of the limitations in the reverse bias safe operating area of power Schottky diodes. A consistent set of experimental data together with theoretical analysis and ATLAS simulations are presented to explain possible reasons of device failures.