Charge trapping type FinFET flash memory with Al2O3 blocking layer

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI:10.1109/S3S.2013.6716572

Y. Liu, T. Nabatame, T. Matsukawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, T. Chikyow, M. Masahara

引用次数: 2

Abstract

In this paper, as a further study, we fabricated charge trapping type SOI-FinFET flash memories with different blocking layers of Al₂O₃ and SiO₂, and comparatively investigate their electrical characteristics.

查看原文本刊更多论文

具有Al2O3阻挡层的电荷捕获型FinFET闪存

本文进一步研究了采用不同的Al2O3和SiO2阻挡层制备电荷捕获型SOI-FinFET闪存，并对其电学特性进行了比较研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

自引率

0.00%

发文量