A Brief introduction to Memristor Device

Eman Omar, Hesham H. Aly, M. Fedawy
{"title":"A Brief introduction to Memristor Device","authors":"Eman Omar, Hesham H. Aly, M. Fedawy","doi":"10.21608/ijaebs.2023.172239.1067","DOIUrl":null,"url":null,"abstract":"In this paper, a brief introduction to memristor device will be presented. Since 1971, memristor device invented by Leo Chua which included in the fundamental electrical elements besides resistors, capacitors and inductors. Memristor consider as the missing elements that correlate between the flux and the charges of the electrons. Memristor was not realized as a physical component until recently. HP and Knowm are the available physical memristor device in the market with different structure. However, HP memristor is considered to be the most structure have been studied from the researchers. Now a days considered is the core element in AI accelerators which depends on memory processor structure. This paper will discuss the history of memristor and its structure based on HP and Knowm approach with mathematical models. Some fabrication techniques will be discussed and the applications.","PeriodicalId":360790,"journal":{"name":"International Journal of Advanced Engineering and Business Sciences","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Advanced Engineering and Business Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21608/ijaebs.2023.172239.1067","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper, a brief introduction to memristor device will be presented. Since 1971, memristor device invented by Leo Chua which included in the fundamental electrical elements besides resistors, capacitors and inductors. Memristor consider as the missing elements that correlate between the flux and the charges of the electrons. Memristor was not realized as a physical component until recently. HP and Knowm are the available physical memristor device in the market with different structure. However, HP memristor is considered to be the most structure have been studied from the researchers. Now a days considered is the core element in AI accelerators which depends on memory processor structure. This paper will discuss the history of memristor and its structure based on HP and Knowm approach with mathematical models. Some fabrication techniques will be discussed and the applications.
忆阻器器件简介
本文将简要介绍忆阻器器件。自1971年蔡少华发明忆阻器以来,忆阻器是除电阻器、电容及电感之外的基本电元件。忆阻器被认为是与电子的通量和电荷相关的缺失元件。直到最近,忆阻器才成为一种物理元件。HP和Knowm是市场上可用的结构不同的物理忆阻器器件。然而,高压忆阻器被认为是目前研究最多的结构。现在考虑的是AI加速器的核心元素,这取决于内存处理器结构。本文将讨论基于HP和Knowm方法的忆阻器的历史及其结构,并建立数学模型。本文将讨论一些制造技术及其应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信