Reconfigurable RF Carrier Generation in the mm-Wave Band with Silicon Photonics Circuit

F. Falconi, C. Porzi, P. Ghelfi, M. Sorel, A. Bogoni
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引用次数: 1

Abstract

Flexible generation of RF carriers in the millimeter-wave band up to the sub-THz region is demonstrated using a photonic integrated circuit realized in silicon-on-insulator technology. The circuit exploits photonic integrated filters for selecting two isolated tones out of an input optical frequency comb generated using a local oscillator (LO) at a submultiple frequency of the output RF signal. Experimental results confirm a large suppression ratio of RF spurious tones up to more than 30dB for generated carrier frequencies ranging from 40GHz to 126GHz using a maximum LO frequency of 20GHz.
基于硅光子电路的毫米波波段可重构射频载波生成
利用绝缘体上硅技术实现的光子集成电路,演示了毫米波到次太赫兹区域内射频载流子的柔性产生。该电路利用光子集成滤波器从输入光学频率梳中选择两个隔离的音调,该频率梳是由本振(LO)以输出射频信号的次倍频产生的。实验结果证实,在最大本端频率为20GHz的情况下,对于产生的载波频率范围为40GHz至126GHz,射频杂散音的抑制比高达30dB以上。
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