Progress and future challenges of SiC power devices and process technology

Abstract

Recent progress in SiC device physics and development of power devices in the authors' group is reviewed. The impact ionization coefficients in the wide temperature range were determined, which enables accurate device simulation. 13 kV SiC pin diodes with a very low differential on-resistance of 1.4 mΩ.cm2 and 11 kV SiC epitaxial MPS diodes are presented. A mobility-limiting factor in SiC MOSFETs is discussed, and 3 kV reverse-blocking MOSFETs are demonstrated.