TCAD simulation of trench-gate IGBTs for prediction of carrier lifetime requirements for future scaled devices

Abstract

Silicon trench-gate insulated gate bipolar transistors (IGBTs) were analyzed using technology CAD (TCAD). Excellent agreement was confirmed between the JC-VCE characteristics obtained by 3D-TCAD simulations and experiments. The carrier lifetime requirement for scaled trench-gate IGBTs was determined by extraction of the on-resistance of the n-base layer derived from the electric potential profile.