A Compact Room-Temperature 510-560 GHz Frequency Tripler with 30-mW Output Power

J. Siles, K. Cooper, Choonsup Lee, R. Lin, G. Chattopadhyay, I. Mehdi
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引用次数: 2

Abstract

We report on a compact high-power 510-560 GHz GaAs Schottky diode based frequency tripler with enhanced power handling capabilities, showing a world-record measured peak power of 30 mW, at room-temperature, when pumped with 350-400 mW. This corresponds to a ten times better performance than previously reported sources in this frequency range. The increase in power handling capabilities is achieved by using an improved epitaxial structure together with an on-chip power combined topology that allows to combine several multiplying structures onto a single chip. The chip also exhibits a state-of-the-art conversion efficiency of 8-9% without any correction for the losses in fixtures/transitions used for the tests.
一种小巧的室温510- 560ghz三倍频器,输出功率30mw
我们报告了一种紧凑的大功率510- 560ghz GaAs肖特基二极管三倍频器,具有增强的功率处理能力,在室温下,当泵浦功率为350- 400mw时,其测量峰值功率为30mw,创下了世界纪录。这相当于在此频率范围内比以前报道的源要好十倍的性能。功率处理能力的提高是通过使用改进的外延结构和片上功率组合拓扑来实现的,该拓扑允许将多个倍增结构组合到单个芯片上。该芯片还具有8-9%的最先进转换效率,无需对用于测试的固定装置/转换的损失进行任何校正。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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