J. Siles, K. Cooper, Choonsup Lee, R. Lin, G. Chattopadhyay, I. Mehdi
{"title":"A Compact Room-Temperature 510-560 GHz Frequency Tripler with 30-mW Output Power","authors":"J. Siles, K. Cooper, Choonsup Lee, R. Lin, G. Chattopadhyay, I. Mehdi","doi":"10.23919/eumc.2018.8541363","DOIUrl":null,"url":null,"abstract":"We report on a compact high-power 510-560 GHz GaAs Schottky diode based frequency tripler with enhanced power handling capabilities, showing a world-record measured peak power of 30 mW, at room-temperature, when pumped with 350-400 mW. This corresponds to a ten times better performance than previously reported sources in this frequency range. The increase in power handling capabilities is achieved by using an improved epitaxial structure together with an on-chip power combined topology that allows to combine several multiplying structures onto a single chip. The chip also exhibits a state-of-the-art conversion efficiency of 8-9% without any correction for the losses in fixtures/transitions used for the tests.","PeriodicalId":171460,"journal":{"name":"2018 15th European Radar Conference (EuRAD)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 15th European Radar Conference (EuRAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2018.8541363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report on a compact high-power 510-560 GHz GaAs Schottky diode based frequency tripler with enhanced power handling capabilities, showing a world-record measured peak power of 30 mW, at room-temperature, when pumped with 350-400 mW. This corresponds to a ten times better performance than previously reported sources in this frequency range. The increase in power handling capabilities is achieved by using an improved epitaxial structure together with an on-chip power combined topology that allows to combine several multiplying structures onto a single chip. The chip also exhibits a state-of-the-art conversion efficiency of 8-9% without any correction for the losses in fixtures/transitions used for the tests.