An efficient 290 GHz harmonic oscillator in transferred-substrate InP-DHBT technology

Abstract

This paper presents a single-ended efficient 290 GHz harmonic oscillator, realized using 0.8 μm transferred-substrate (TS) InP-DHBT technology. The architecture of this oscillator is based on a third harmonic generation from a fundamental differential cross-coupled topology. The oscillator delivers -8.5 dBm output power. DC consumption is only 28 mW from a 1.5 volts power supply, which corresponds to 0.5 % overall DC-to-RF efficiency. To the authors' knowledge, this is the highest DC-to-RF efficiency harmonic oscillator beyond the 220 GHz frequency band published so far.