A 2 mW, Sub-2 dB Noise Figure, SiGe Low-Noise Amplifier For X-band High-Altitude or Space-based Radar Applications

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI:10.1109/RFIC.2007.380962

T. Thrivikraman, W. Kuo, J. Comeau, A. Sutton, J. Cressler, P. Marshall, M. Mitchell

引用次数: 44

Abstract

This paper presents a low-power X-band low-noise amplifier (LNA) implemented in silicon-germanium (SiGe) technology targeting high-altitude or space-based low-power density phased-array radar systems. To our knowledge, this X-band LNA is the first in a Si-based technology to achieve less than 2 dB mean noise figure while dissipating only 2 mW from a 1.5 V power supply. The gain of the circuit is 10 dB at 10 GHz with an IIP 3 of 0 dBm. In addition to standard amplifier characterization, the LNA's total dose radiation response has been evaluated.

查看原文本刊更多论文

2mw, sub - 2db噪声系数，SiGe低噪声放大器，用于x波段高空或天基雷达应用

本文提出了一种采用硅锗(SiGe)技术的低功率x波段低噪声放大器(LNA)，用于高空或天基低功率密度相控阵雷达系统。据我们所知，这款x波段LNA是基于si的技术中第一个实现平均噪声系数低于2 dB，同时从1.5 V电源中仅消耗2 mW的LNA。该电路在10ghz时的增益为10db, IIP为0 dBm。除标准放大器特性外，还对LNA的总剂量辐射响应进行了评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

自引率

0.00%

发文量