Optimization of 5V power devices based on CMOS for hot-carrier degradation

Abstract

We propose “power CMOS,” suitable for use as large current output devices. The proposed structure can be fabricated by low cost 0.6um logic CMOS process and assures long-term reliability even under the stress of hot-electrons. The developed power CMOS have achieved low specific on resistances of 8.1m: mm 2 for NMOS and 21.1m: mm 2 for PMOS.