Design features for high pressure transducers

V. A. Gridchin, V. Grischenko, V. M. Lubimsky, A. Shaporin, J. Lee
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引用次数: 1

Abstract

In this experimental work the polysilicon pressure transducers are designed with pressure-sensitive elements and made for pressures over 5 MPa. To determine the magnitude of mechanical stress in the diaphragm, we defined gauge factors from longitudinal and transverse piezoresistors on the console beam made from the same wafer as the diaphragm. Also, we made a model for mechanical stress in the diaphragm by the finite element method (FEM) by taking into account not only the uniformly distributed load on the plate of the diaphragm, but also the load on the lateral side of the diaphragm. The comparison of the calculated mechanical stress with the experimentally defined one has shown a coincidence within 20% error bound.
高压传感器的设计特点
在本实验工作中,多晶硅压力传感器采用压敏元件设计,压力大于5mpa。为了确定膜片中机械应力的大小,我们从控制台梁上的纵向和横向压阻中定义了测量因子,该压阻由与膜片相同的晶片制成。同时,在考虑膜片板均布载荷和膜片侧向载荷的基础上,采用有限元法建立了膜片内部的机械应力模型。计算的机械应力与实验定义的力学应力比较,在20%的误差范围内吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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