K. Yeo, K. Cho, Ming Li, S. Suk, Y. Yeoh, Min-Sang Kim, H. Bae, Ji-myoung Lee, Suk-kang Sung, Jun Seo, Bokkyoung Park, Dong-Won Kim, Donggun Park, Won-Seoung Lee
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引用次数: 21
Abstract
Gate-all-around (GAA) MOSFET with single silicon nanowire is fabricated and applied to SONOS memory as a cell transistor for NAND flash string. Driving current over 1 uA, which is sufficient to NAND string, is obtained with single nanowire of ~7 nm width. Using FN tunneling conditions, VTH window of 4.5 V and fast program/erase (P/E) speed of ~10 us are obtained, respectively. The smaller nanowire width is, the faster program speed and the larger VTH shift are achieved. P/E operations in NAND string with GAA SONOS nanowire are demonstrated for the first time.
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