Initial oxidation of Si[001] induced by translational kinetic energy of O/sub 2/ supersonic molecula

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Pub Date : 2000-07-11 DOI:10.1109/IMNC.2000.872734

A. Yoshigoe, M. Sano, Y. Teraoka

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Abstract

The translational kinetic energy (Et) of O2, incident molecules can considerably affect the probability of dissociative adsorption and enhance surface chemical reactions. Supersonic molecular beams (SSMB ) is a fascinating method to control gas molecules with well-defined spatial distribution, particle flux and ( translational ) kinetic energies. The SSMB is also important technique for surface scientists to study adsorption energy barrier and sticking probabilities of incident particles on solid surfaqes. A great deal of experimental and theoretical work has been done to investigate kinetics and dynamics of O2, adsorption on Si(001) surface, however, little number of molecular beam work with greater than Et = 1.0eV of O2, on the initial oxidation of Si(001) has been published. We report the O2, sticking on Si(001) surface ( passive oxidation ) and the SiO desorption ( active oxidation ) induced by translational kinetic energies of O2, (up to 3.0 eV) using the SSMB.

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O/sub - 2/超音速分子平动动能诱导Si的初始氧化[001]

入射O2分子的平动动能(Et)可以显著影响解离吸附的概率，增强表面化学反应。超声速分子束(SSMB)是一种具有良好空间分布、粒子通量和(平动)动能的气体分子控制方法。SSMB也是表面科学家研究入射粒子在固体表面的吸附能垒和粘附概率的重要技术。前人对O2在Si(001)表面的吸附动力学和动力学进行了大量的实验和理论研究，但对大于Et = 1.0eV的O2对Si(001)初始氧化的分子束功研究较少。我们用SSMB报道了O2在Si(001)表面的吸附(被动氧化)和由O2的平移动能(高达3.0 eV)诱导的SiO脱附(主动氧化)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

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