Analysis and Design of Stacked-Nanosheet FeFET Synapse Conductance Response under Identical Pulse Scheme for Neuromorphic Applications

Abstract

This work investigates and analyzes the synapse response under the identical gate pulse stimulation scheme for Stacked-Nanosheet FeFET by using Monte Carlo nucleation-limited-switching (NLS) based model. Our study indicates that thinner EOT of interfacial layer and smaller saturated polarization (Ps) can be used to improve the linearity and symmetry of GDS due to smaller depolarization field. In addition, Stacked-Nanosheet structure can increase effective $\mathrm{W}/\mathrm{L}$ without footprint penalty to boost $\mathrm{G}_{\max}/\mathrm{G}_{\min}$.