Testing the limits of silicon technology based MEMS materials

O. Paul, P. Ruther
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引用次数: 4

Abstract

This paper summarizes some advances by the Microsystem Materials Laboratory of the Institute of Microsystem Technology IMTEK, University of Freiburg, in testing and transcending current limits of micro materials and MEMS structures. The emphasis is on materials inspired from silicon IC technology enhanced by micromachining. Three studies of the fracture of micromaterials and microstructure are reported dealing respectively with the shock resistance of epipoly, the failure of PEVCD silicon nitride membranes under particle impact, and the fracture of LPCVD silicon nitride membranes under differential pressure. Extensions of the application range of MEMS are illustrated using polysilicon thin films operated at temperatures up to 1200 K, microstructures for differential thermal analysis, and the use of sharp silicon microstructures for embossing and scratching materials with Vickers hardness from 4 HV to 73 HV. Finally, an analysis of higher-order offset components in integrated Hall sensors is presented.
测试基于硅技术的MEMS材料的极限
本文综述了德国弗莱堡大学IMTEK微系统技术研究所微系统材料实验室在微材料和MEMS结构测试和突破电流极限方面取得的一些进展。重点是受微加工增强的硅集成电路技术启发的材料。本文报道了三种微材料断裂和微观结构的研究,分别涉及聚乳酸的抗冲击性、PEVCD氮化硅膜在颗粒冲击下的断裂和LPCVD氮化硅膜在差压下的断裂。MEMS应用范围的扩展是使用在高达1200 K温度下工作的多晶硅薄膜,用于差热分析的微结构,以及使用锋利的硅微结构来压花和刮花材料,维氏硬度从4 HV到73 HV。最后,对集成霍尔传感器中的高阶偏置分量进行了分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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