High speed wafer dicing with ablation laser cut

David Wong Chee Way, L. Ying
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引用次数: 2

Abstract

Conventional blade dicing is well known as standard process for semiconductor wafer singulation. As of to-date, wafer technologies employed many changes such as larger wafer diameter, thinner chip ≤ 100μm and heavy metal structure in the saw street. Consequently, unforeseen defects such as longer sawing time lead to wafer bond pad corrosion, chip crack and larger backside chipping arised. Blade dicing can no longer fulfill the demands of new emerging types of semiconductor devices. New chips separation methods are investigated here. Laser cutting is a relatively recent technology that offers the solution for high-speed dicing for thin wafer. Main focus in this paper is established of ablation laser cut method for discrete devices and pre-production experiences. Others laser cut technologies are qualitatively discussed.
采用烧蚀激光切割的高速圆片切割
传统的刀片切割是半导体晶圆模拟的标准工艺。到目前为止,晶圆技术发生了许多变化,如更大的晶圆直径,更薄的芯片≤100μm,以及在锯街上的重金属结构。因此,不可预见的缺陷,如较长的锯切时间,导致晶圆键垫腐蚀,芯片裂纹和更大的背面切屑出现。刀片切割已经不能满足新型半导体器件的需求。研究了新的芯片分离方法。激光切割是一项相对较新的技术,为薄晶圆片的高速切割提供了解决方案。本文主要介绍了离散器件的烧蚀激光切割方法的建立和预生产经验。对其他激光切割技术进行了定性讨论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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