A new physical I-V model of deep-submicron FD SOI MOSFETs for analogue/digital circuit simulation

Abstract

A new analytical current model in the strong inversion operation region for fully depleted SOI/MOSFET with channel lengths down to deep submicrometer range is developed with only one single expression for both linear and saturation region without using a smoothing function. The convergence when employed in circuit simulators is improved. Measurements on devices of varied geometry show good agreement with model predictions.