Multiscale approaches to thermoelectric materials and devices

C. Nan, Junbo Wu, J. Nan, Xisong Zhou, Jianzhong Zhang
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引用次数: 6

Abstract

Performance of thermoelectric materials and devices depends upon various features on different levels from microscopic to macroscopic scales. On the atomic scale, to find new multi-component compounds with complex electronic and crystal structures is a way to high-Z thermoelectric materials. On the nano-scale, quantum wells, wires and dots are considered to be the dawn for breaking the traditional barrier of ZT/spl sim/1 existing for several decades. From the point of view of microstructure, inhomogeneities in thermoelectric materials, such as interfaces/grain-boundaries and inclusions, have significant influences on their thermoelectric properties. On the macroscopic scale, the thermoelectric device functions depend on thermoelectric materials used for building the device and device configuration (such as multistage or segmented devices). This review briefly presents the state-of-the-art and perspectives in the multiscale understanding of thermoelectric materials and devices.
热电材料和器件的多尺度方法
热电材料和器件的性能取决于从微观到宏观不同层次上的各种特征。在原子尺度上,寻找具有复杂电子和晶体结构的新型多组分化合物是制备高z热电材料的一条途径。在纳米尺度上,量子阱、量子线和量子点被认为是打破存在了几十年的ZT/spl / sim/1传统壁垒的曙光。从微观结构的角度看,热电材料的界面/晶界和夹杂等不均匀性对热电性能有重要影响。在宏观尺度上,热电器件的功能取决于用于构建器件和器件配置的热电材料(如多级或分段器件)。本文简要介绍了热电材料和器件的多尺度理解的现状和前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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