Charge pump circuit with improved absolute current deviation and increased dynamic output voltage range across PVT variations

Suraj Gupta, S. A. Mondal, H. Rahaman
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引用次数: 1

Abstract

A charge-pump circuit, that provides highly matched charging and discharging current for an increased dynamic output voltage range with reduced absolute current deviation across process-voltage-temperature (PVT) variation is presented. The proposed charge-pump circuit featuring regulated-cascode current source and sink circuits along with dual error amplifier based feedback mechanism demonstrates current mismatch below 1% over output voltage variation of 0.1 V to 1.5 V and absolute current variation is less than 0.5% over output voltage variation (0.1Vdd to 0.9Vdd) under nominal process conditions. Circuit performs fairly well under different CMOS process condition for a wide temperature range of -400 C to 1000 C with 1.8 V to 2.2 V supply variation in 180 nm CMOS process.
电荷泵电路改善了绝对电流偏差,增加了PVT变化的动态输出电压范围
提出了一种电荷泵电路,该电路可提供高度匹配的充放电电流,以增加动态输出电压范围,同时减小过程电压-温度(PVT)变化的绝对电流偏差。所提出的电荷泵电路具有调节级联码电流源和吸收电路以及基于双误差放大器的反馈机制,在标称工艺条件下,在0.1V至1.5 V的输出电压变化范围内,电流失配小于1%,在0.1 vdd至0.9Vdd的输出电压变化范围内,绝对电流变化小于0.5%。电路在不同的CMOS工艺条件下表现良好,温度范围为-400℃至1000℃,电源电压为1.8 V至2.2 V,采用180 nm CMOS工艺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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