Technological aspects of manufacturing planar microwave diodes with Au-Ti(ZrB/sub x/)-n-n/sup +/ 4HSiC schottky barrier

13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003. Pub Date : 1900-01-01 DOI:10.1109/CRMICO.2003.158934

N. S. Boltovets, V. N. Ivanov, R. Konakova, Y. Kudrik, V. V. Milenin, O. A. Ageyev, A. Svetlichniy, S.I. Solovyov, T. Sudarshan

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Abstract

The parameters of planar diodes with Au-ZrB/sub x/-n-n/sup +/4HSiC Schottky barrier have been studied both before and after rapid thermal annealing (RTA) at T=1000/spl deg/C. A possibility to produce high-voltage diode structures that remain serviceable after the RTA at T=1000/spl deg/C is demonstrated.

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用Au-Ti(ZrB/sub x/)-n-n/sup +/ 4HSiC肖特基势垒制造平面微波二极管的技术方面

研究了具有Au-ZrB/sub x/-n-n/sup +/4HSiC肖特基势垒的平面二极管在T=1000/spl℃快速热退火(RTA)前后的参数。证明了在T=1000/声压度/C的RTA后仍可使用的高压二极管结构的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003.

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