Challenges and novel approaches for photo resist removal and post-etch residue removal for 22 nm interconnects

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090397

P. Mertens, T-G. Kim, M. Claes, Q. Le, G. Vereecke, E. Kesters, S. Suhard, A. Pacco, M. Lux, K. Kenis, A. Urbanowicz, Z. Tokei, G. Beyer

引用次数: 4

Abstract

The critical challenges of removal of post metal hard mask etch photo resist removal and post low-k etch residue removal are described. An overview of some new non-plasma based approaches is presented.

查看原文本刊更多论文

22纳米互连光抗蚀剂去除和蚀刻后残留物去除的挑战和新方法

描述了去除后金属硬掩膜蚀刻光抗蚀剂和后低k蚀刻残留物的关键挑战。综述了一些新的非等离子体技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2009 IEEE International Interconnect Technology Conference

自引率

0.00%

发文量