A CAD-oriented non-quasistatic MOSFET model for transient analysis

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1986.1156979

C. Turchetti, G. Masetti, P. Mancini

引用次数: 6

Abstract

A comparison of the step response of a MOSFET predicted by a simplified non-quasistatic model with the results of detailed numerical simulations will be presented. The sources of error will be detailed. The model afforded greater efficiency in circuit simulation.

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面向cad的非准静态MOSFET模型用于瞬态分析

用简化的非准静态模型预测的MOSFET阶跃响应将与详细的数值模拟结果进行比较。将详细说明误差的来源。该模型提高了电路仿真的效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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