An on-line test strategy and analysis for a 1T1R crossbar memory

Manuel Escudero-Lopez, F. Moll, A. Rubio, I. Vourkas
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引用次数: 4

Abstract

Memristors are emerging devices known by their nonvolability, compatibility with CMOS processes and high density in circuits density in circuits mostly owing to the crossbar nanoarchitecture. One of their most notable applications is in the memory system field. Despite their promising characteristics and the advancements in this emerging technology, variability and reliability are still principal issues for memristors. For these reasons, exploring techniques that check the integrity of circuits is of primary importance. Therefore, this paper proposes a method to perform an on-line test capable to detect a single failure inside the memory crossbar array.
1T1R交叉棒存储器在线测试策略与分析
忆阻器是一种新兴的器件,以其不易失性、与CMOS工艺的兼容性以及电路中的高密度而闻名,这主要归功于其交叉棒纳米结构。它们最显著的应用之一是在存储系统领域。尽管它们具有很好的特性和新兴技术的进步,可变性和可靠性仍然是记忆电阻器的主要问题。由于这些原因,探索检查电路完整性的技术是至关重要的。因此,本文提出了一种在线检测方法,可以检测存储器交叉棒阵列内部的单个故障。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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