B. Boksteen, C. Papadopoulos, D. Prindle, A. Kopta, C. Corvasce
{"title":"6.5 kV field shielded anode (FSA) diode concept with 150C maximum operational temperature capability","authors":"B. Boksteen, C. Papadopoulos, D. Prindle, A. Kopta, C. Corvasce","doi":"10.1109/ISPSD.2018.8393594","DOIUrl":null,"url":null,"abstract":"In this paper we present a low leakage current 6.5 kV field shielded anode (FSA) diode with high forward bias safe operating area (FBSOA) ruggedness capable of reliable operation up to 150 °C. This is achieved through optimization of the junction termination, the resistive zone (RZ) between this area and the active region and selective shallow ion irradiation for local lifetime control. As a result, the diode maintains or exceeds the softness, surge current and FBSOA capabilities set by the 6.5 kV carrier axial lifetime (CAL) diode, while also reducing its (125 °C) leakage current by more than 4 times achieving magnitudes typically associated with low leakage emitter efficiency control (EMCON) based concepts.","PeriodicalId":166809,"journal":{"name":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2018.8393594","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper we present a low leakage current 6.5 kV field shielded anode (FSA) diode with high forward bias safe operating area (FBSOA) ruggedness capable of reliable operation up to 150 °C. This is achieved through optimization of the junction termination, the resistive zone (RZ) between this area and the active region and selective shallow ion irradiation for local lifetime control. As a result, the diode maintains or exceeds the softness, surge current and FBSOA capabilities set by the 6.5 kV carrier axial lifetime (CAL) diode, while also reducing its (125 °C) leakage current by more than 4 times achieving magnitudes typically associated with low leakage emitter efficiency control (EMCON) based concepts.