{"title":"5-GHz 20-Watt GaAs FET Amplifier for MLS","authors":"K. Hirai, H. Takamatsu, S. Morikawa, N. Tomita","doi":"10.1109/MWSYM.1986.1132217","DOIUrl":null,"url":null,"abstract":"5-GHz 20-watt GaAs FET amplifier using two state-of-the-art high power FETs in the final stage was developed for MLS applications. GaAs FET limiter with unique input/output characteristics and efficient operation of the final FETs were studied for this purpose. Stabilization of output power within 1dB peak-to-peak by means of open loop control was achieved of PIN diode attenuator.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"160 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132217","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
5-GHz 20-watt GaAs FET amplifier using two state-of-the-art high power FETs in the final stage was developed for MLS applications. GaAs FET limiter with unique input/output characteristics and efficient operation of the final FETs were studied for this purpose. Stabilization of output power within 1dB peak-to-peak by means of open loop control was achieved of PIN diode attenuator.