5-GHz 20-Watt GaAs FET Amplifier for MLS

K. Hirai, H. Takamatsu, S. Morikawa, N. Tomita
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Abstract

5-GHz 20-watt GaAs FET amplifier using two state-of-the-art high power FETs in the final stage was developed for MLS applications. GaAs FET limiter with unique input/output characteristics and efficient operation of the final FETs were studied for this purpose. Stabilization of output power within 1dB peak-to-peak by means of open loop control was achieved of PIN diode attenuator.
用于MLS的5 ghz 20瓦GaAs FET放大器
在最后阶段使用两个最先进的高功率场效应管的5 ghz 20瓦GaAs场效应管放大器被开发用于MLS应用。为此,研究了具有独特输入/输出特性和高效运行的GaAs FET限幅器。通过对PIN二极管衰减器的开环控制,实现了输出功率在1dB以内的峰值稳定。
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