Chemically amplified electron beam positive resist with acetal protecting group

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI:10.1109/IMNC.1999.797487

S. Saito, N. Kihara, T. Ushirogouchi, T. Nakasugi

引用次数: 0

Abstract

In this paper, we discuss about the chemically amplified EB positive resist based on acetal-protected Poly(hydroxystyrene) (PHS) and investigate the influence of the photo-acid generator to resist performance.

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带有缩醛保护基团的化学放大电子束正极抗蚀剂

本文讨论了基于缩醛保护聚羟基苯乙烯(PHS)的化学放大EB正电抗蚀剂，并研究了光酸发生器对其抗蚀性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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