A 16-24 GHz CMOS SOI LNA with 2.2 dB Mean Noise Figure

Abstract

This paper presents a K-band low-noise amplifier (LNA) with a measured mean noise figure of 2.2 dB at 16-24 GHz. The LNA is fabricated in 45 nm Semiconductor-on-Insulator (SOI) CMOS process. The measured S-parameters result a peak gain of 19.5 dB at 20 GHz and S11 <; -10 dB at 16-24 GHz. The design shows that CMOS SOI process can provide a comparable noise performance with GaAs and SiGe devices. To the best of authors' knowledge, this LNA achieves the lowest noise figure at K-band in any CMOS process.