Optimization of fin profile and implant in bulk FinFET technology

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480517

Y.-S Wu, C. Tsai, T. Miyashita, P.N. Chen, B. Hsu, P. Wu, H. Hsu, C. Chiang, H.H. Liu, H.-L. Yang, K. Kwong, Juei-Chun Chiang, C.-W Lee, Y.-J Lin, C.-A Lu, C. Lin, S. Wu

引用次数: 3

Abstract

A comprehensive analysis of fin profile effect on bulk FinFET device characteristics is described in this paper. Optimal fin profile and anti-punch-through (APT) implant profile are important to DC performance and multiple-Vt offering capability, which are essential for system-on-chip (SoC) applications. This study provides practical device design guidelines for bulk FinFET technology.

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块体FinFET技术中鳍型优化与植入

本文全面分析了鳍型对大面积FinFET器件特性的影响。最佳鳍型和抗穿孔(APT)植入型对直流性能和多电压输出能力至关重要，这对于片上系统(SoC)应用至关重要。本研究为大规模FinFET技术提供实用的器件设计指南。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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