Effects of Unisolated Top Gate on Performance of Dual-Gate InGaZnO Thin-Film Transistor

Abstract

The amorphous material InGaZnO (IGZO) is sensitive to air humidity, resulting in the formation of metal-hydroxyl defects and causing stability issue of thin-film transistor (TFT). The stability issue is suppressed by depositing a metal layer directly on the IGZO layer in this work. Moreover, the mobility of the device is improved when a Ti metal layer is deposited on the IGZO semiconductor layer. The proposed TFT shows potential for switching element in Active Matrix Liquid Crystal Displays (AMLCDs) pixel unit.