A 9 ns, low standby power CMOS PLD with a single-poly EPROM cell

Abstract

The authors describe a 9-ns CMOS programmable logic device (PLD) with a standby current of 10 mu A. The circuit is a 24-pin PLD with 10 I/Os (input/outputs) and 12 dedicated inputs. Each I/O has eight summed-product terms and an output-enable control product term feeding into a programmable macrocell. Most standard 24-pin PLDs can be emulated by selectively programming the macrocell architecture bits. Bit-line precharging circuitry is used to reduce the speed degradation caused by designing for low standby current. 'Ground bounce' is alleviated by controlling the output buffer speed. The circuit has been fabricated in a 1- mu m single-polysilicon CMOS EPROM (electrically programmable read-only memory) technology that has been optimized for speed rather than for packing density. Device and technology characteristics are summarized.<>