Investigation of InP/InGaAs heterostructure confinement bipolar transistors grown by low-pressure MOCVD

IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) Pub Date : 2004-09-06 DOI:10.1109/IVESC.2004.1414279

J. Tsai, Ying-Cheng Chu, King-Poul Zhu, S. Chiu

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Abstract

In this article, high-performance InP/InGaAs heterostructure confinement bipolar transistors, including a /spl delta/-doped heterojunction bipolar transistor (5-HBT) and superlattice-confinement bipolar transistor (SCBT), are successfully fabricated and demonstrated.

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低压MOCVD生长InP/InGaAs异质结构约束双极晶体管的研究

本文成功制备并演示了高性能InP/InGaAs异质结构约束双极晶体管，包括a/ spl δ /掺杂异质结双极晶体管(5-HBT)和超晶格约束双极晶体管(SCBT)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839)

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