Design of 1200-V RC-IGBT for TOYOTA's 5th generation HEV/PHEV systems

Abstract

We developed a new 1200-V reverse conducting insulated gate bipolar transistor with a structure called Schottky and multi-layered anode (a unique carrier injection control approach without lifetime-control) for TOYOTA's 5th generation hybrid electric vehicle and plug-in hybrid electric vehicle systems. The developed devices reduced total losses (conduction and switching losses) by 10% compared to the conventional product. It also reduced the number of parts for the power module and contributed to its 25% size reduction, ultimately contributing to the downsizing of 13% of the power control unit.