Design of sub-90 nm circuits and design methodologies

A. Devgan, R. Puri, Sachin Sapatnaker, T. Karnik, R. Joshi
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Abstract

Summary form only given. The tutorial discusses the design challenges of scaled CMOS circuits in sub-90 nm technologies and the design methodologies required in order to produce robust designs with the desired power-performance trade-off. We focus on four major components: design challenges of sub-90 nm CMOS circuits with particular emphasis on the implications of each individual device scaling element on circuit design; design methodologies for implementing robust circuits with desired power performance characteristics; managing leakage power; circuit design in the presence of uncertainty.
90纳米以下电路的设计与设计方法
只提供摘要形式。本教程讨论了在sub-90 nm技术中缩放CMOS电路的设计挑战,以及为了产生具有所需功率性能权衡的稳健设计所需的设计方法。我们专注于四个主要组成部分:90纳米以下CMOS电路的设计挑战,特别强调每个单独的器件缩放元件对电路设计的影响;实现具有所需功率性能特性的鲁棒电路的设计方法;管理漏电;存在不确定性的电路设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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