High density overlay interconnect (HDI) delivers high frequency performance for GaAs systems

M. Gdula, T. Haller, V. Krishnamurthy, G. Forman
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引用次数: 3

Abstract

The authors point out that large die size, high gate and transistor count digital GaAs devices present problems to the system designer, such as efficient distribution of low voltage, high current power supply bias (2 VDC at 25 A, and greater). The effective delivery of such electrical power must also allow for efficient removal of the heat generated by the electronics circuits. By exploiting appropriate MCM technology, these thermal concerns are satisfied while eliminating to a maximum extent conventional circuit packaging parasitics which limit performance of high frequency systems. The overlay interconnect MCM approach used by GE/TI places IC chips first, into a structure for the most advantageous thermal management, while eliminating conventional packaging resistance, inductance and capacitance effects. Several designs constructed with overlay interconnect demonstrate the highest frequency operation and thermal performance of MCMs to date. System designs with 400 MHz and greater clock operation and dissipating 50 W are described.<>
高密度覆盖互连(HDI)为GaAs系统提供了高频性能
作者指出,大芯片尺寸、高栅极和晶体管数的数字砷化镓器件给系统设计人员带来了一些问题,例如低电压的有效分配、大电流电源偏置(25 A时2 VDC,甚至更大)。这种电力的有效输送还必须考虑到电子电路产生的热量的有效去除。通过利用适当的MCM技术,这些热问题得到了满足,同时最大程度地消除了限制高频系统性能的传统电路封装寄生。GE/TI使用的覆盖互连MCM方法首先将IC芯片放入最有利的热管理结构中,同时消除传统封装电阻,电感和电容影响。几种采用覆盖互连的设计展示了迄今为止mcm的最高频率工作和热性能。描述了时钟工作频率为400mhz及更高,功耗为50w的系统设计。
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