Application of Deep Artificial Neural Network to Model Characteristic Fluctuation of Multi-Channel Gate-All-Around Silicon Nanosheet and Nanofin MOSFETs Induced by Random Nanosized Metal Grains

Abstract

In this work, we propose a deep artificial neural network (D-ANN) to estimate the work function fluctuation (WKF) on 4-channel stacked gate-all-around (GAA) silicon (Si) nanosheet (NS) and nanofin (NF) MOSFET devices for the first time. The 2-layered simple deep model can well predict the transfer characteristics for both NS/NF FET with a large number of (128) input features, utilizing considerably lesser (1100 samples) data uniformly. The resultant model is evaluated by the $\mathrm{R}^{2}$ score and RMSE to witness its competency and the average error is $< 4\%$. We do also discuss the circuit simulation possibility by applying the ANN approach.