Dopant-free CMOS: A new device concept

Abstract

In this paper we report on a newly developed multigate nanowire (NW) based field-effect device (NWFET) where the transistor type is freely selectable by the application of a control-voltage, adding to design flexibility in integrated circuit fabrication. Moreover, the midgap Schottky-barrier source and drain contacts of the NWFET make it feasible for the usa in high temperature environments, since the devices posses both stability against high temperatures and low OFF-state current at the same time. This makes the presented NWFET a multi-purpose device for many specific circuit applications.