Ultra shallow secondary ion mass spectrometry

R. Liu, C. M. Ng, A. Wee
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引用次数: 2

Abstract

Following the increasingly stringent requirements in the characterization of sub-micron IC devices, a good understanding of the various factors affecting ultra shallow depth profiling in secondary ion mass spectrometry (SIMS) has become crucial. Achieving high depth resolution (of the order of 1 nm) is critical in the semiconductor industry today, and various methods have been developed to optimize depth resolution. In this paper, we discuss ultra shallow SIMS depth profiling of B and Ge delta-doped Si samples using low energy (e.g. 500 eV) O/sub 2//sup +/ primary beams. The relationship between depth resolution of the delta layers and surface topography measured by atomic force microscopy (AFM) is studied. The effects of oxygen flooding and sample rotation, used to suppress surface roughening, are also investigated. The various factors that limit the depth resolution in ultra shallow SIMS depth profiling are discussed.
超浅次离子质谱法
随着亚微米IC器件表征要求的日益严格,深入了解次级离子质谱(SIMS)中影响超浅深度谱分析的各种因素变得至关重要。实现高深度分辨率(约1纳米)在当今的半导体工业中至关重要,并且已经开发了各种方法来优化深度分辨率。在本文中,我们讨论了使用低能量(例如500 eV) O/sub //sup +/主光束的B和Ge δ掺杂Si样品的超浅SIMS深度剖面。研究了原子力显微镜(AFM)测量的三角洲层深度分辨率与表面形貌之间的关系。还研究了氧驱和样品旋转对抑制表面粗化的影响。讨论了限制超浅SIMS深度剖面中深度分辨率的各种因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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