{"title":"Hybrid silicon wafer-scale packaging technology","authors":"R. Johnson, J. Davidson, R. Jaeger, D. Kerns","doi":"10.1109/ISSCC.1986.1156981","DOIUrl":null,"url":null,"abstract":"Procedures developed for mounting ICs in holes in a silicon wafer and inter-connecting them, via two-level metalization, will be presented. The performance of the interconnections at high speeds will be compared with traditional hybrid assemblies.","PeriodicalId":440688,"journal":{"name":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1986.1156981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
Procedures developed for mounting ICs in holes in a silicon wafer and inter-connecting them, via two-level metalization, will be presented. The performance of the interconnections at high speeds will be compared with traditional hybrid assemblies.