Shallow and Deep Trench Isolation for use in RF-Bipolar IC:s

Abstract

A novel self-aligned shallow and deep trench isolation for bipolar or BiCMOS RF-IC:s, using both Poly and STI CMP steps for excellent planarity, is presented. The concept is described and verified using a 0.25 μm, 200 mm bipolar epi-base RF process. Process data, SEM micrographs and electrical data are used to verify the validity of the concept.